8300 tga8300- scc gain block amplifier 2 to 18- ghz fr equency range 20- dbm typical output power at 1 -db gain compr ession 7.5- db typical gain input/output swr 1.5:1 on - chip blocking capacitor allows easy cascading l l l l l l 2,362 x 1,625 x 0,152 mm (0.093 x 0.064 x 0.006 in.) the triquint tga8300 - scc is a gaas monolithic distributed amplifier designed for use as a multioctave general - purpose gain block. four 189 - ? gate width fets provide 7.5 -db nominal gain and 5.5 - db noise figur e from 2 to 18- ghz. typical power output is 20 - dbm at 1- db gain compression. typical input and output swrs ar e 1.5:1. ground is provided to the circuitry through vias to the backside metallization. the tga8300 - scc is supplied in chip for m and is engineered for high - volume automated assembly . all metal sur faces are gold plated to be compatible with ther mocompression and thermosonic wire- bonding processes. photo enlargement description triquint semiconductor, inc. texas facilities (972) 994-8465 ?www.triquint.com t r i q u i n t s e m i c o n d u c t o r , i n c .
tga8300 -scc 2 typical small-signal power gain 0 2 4 6 8 10 2 6 10 14 18 frequency (ghz) gain (db) v + = 6 v i + = 50% i dss t a =25? c typical noise figure 0 2 4 6 8 10 2 6 10 14 18 frequency (ghz) noise figure (db) v + = 6 v i + = 50% i dss t a =25? c typical output power p 1db 0 5 10 15 20 25 2 6 10 14 18 frequency (ghz) output power (dbm) v + = 6 v i + = 50% i dss t a =25? c v + = 6 v i + = 50% i dss t a = 25?c v + = 6 v i + = 50% i dss t a = 25?c v + = 6 v i + = 50% i dss t a = 25?c triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com
tga8300 -scc 3 typical return loss 0 6 12 18 24 30 36 2 4 6 8 10 12 14 16 18 frequency (ghz) return loss (db) input output v + = 6 v i + = 50% i dss t a =25? c absolute maximum ratings positive supply voltage, v + .................................................................................................................... 8 v negative supply voltage range, v e .............................................................................................. 0 v to - 5 v power dissipation, p d at (or below) 25 c base-plate temperatur e* ...................................................... 1.8 w operating channel temperature, t ch ** ......................................................... ..................................... 150 c mounting temperature (30 sec), t m .................................................................................................... 320 c storage temperature range, t stg ............................................................................................ - 65 to 150 c ratings over operating channel temperature range, t ch (unless otherwise noted) stresses beyond those listed under absolute maximum ratings may cause per manent damage to the device. these are stress ratings only, and functional operation of the device at these or any oth er conditions beyond those indicated under rf characteristics is not implied. exposure to absolute maximum rated conditions for extended periods may af fect device reliability. * for operation above 25 c base-plate temperature, derate linearly at the rate of 3.8 mw/ c. ** operating channel temperatur e directly affects the device mttf . for maximum life, it is r ecommended that channel temperature be maintained at the lowest possible level. v + = 6 v i + = 50% i dss t a = 25c input output triquint semiconductor, inc. ? texas facilities ? (972) 995-8465 ? www.triquint.com
tga8300 -scc 4 typical s -parameters frequency s 11 s 21 s 12 s 22 gain (ghz) mag ang (? ) mag ang (? ) mag ang (? ) mag ang (? ) (db) 1.0 0.40 4 2.32 -146 0.017 -163 0.52 -110 7.3 1.5 0.40 -151 2.00 167 0.015 97 0.32 -172 6.0 2.0 0.28 180 2.20 155 0.017 91 0.20 109 6.8 2.5 0.26 167 2.34 137 0.022 75 0.20 56 7.4 3.0 0.25 158 2.41 121 0.027 59 0.20 27 7.6 3.5 0.25 151 2.45 105 0.031 40 0.18 10 7.8 4.0 0.25 143 2.46 89 0.033 25 0.15 -2 7.8 4.5 0.25 137 2.45 74 0.037 12 0.11 -10 7.8 5.0 0.25 132 2.44 60 0.040 -3 0.08 -13 7.7 5.5 0.24 127 2.42 46 0.043 -17 0.06 -11 7.7 6.0 0.23 122 2.42 32 0.045 -31 0.06 -9 7.7 6.5 0.21 116 2.41 19 0.048 -45 0.06 -10 7.6 7.0 0.19 112 2.43 5 0.051 -58 0.06 -16 7.7 7.5 0.17 106 2.45 -8 0.054 -72 0.06 -30 7.8 8.0 0.14 101 2.45 -22 0.058 -86 0.04 -44 7.8 8.5 0.11 97 2.45 -36 0.062 v + = 6 v, i + = 50% i dss , t a = 25?c refer ence planes for s - parameter data include bond wires as specified in the recommended assembly diagram. triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com 10.5 9.0 9.5 10.0 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 0.08 0.05 0.05 0.05 0.07 0.09 0.11 0.14 0.17 0.20 0.23 0.25 0.25 0.23 0.20 0.17 0.12 0.09 0.15 0.22 0.30 0.28 0.21 0.03 0.03 0.05 0.07 0.08 0.10 0.11 0.13 0.14 0.14 0.13 0.12 0.10 0.09 0.10 0.13 0.17 0.21 0.23 0.23 0.19 0.12 0.11 0.19 2.46 2.47 2.46 2.45 2.44 2.42 2.43 2.46 2.44 2.49 2.51 2.54 2.54 2.51 2.47 2.46 2.44 2.39 2.40 2.44 2.53 2.64 2.62 7.8 7.8 7.8 7.8 7.8 7.7 7.7 7.7 7.8 7.9 8.0 8.1 8.1 8.0 7.9 7.8 7.7 7.6 7.6 7.7 8.1 8.4 8.4 7.7 95 105 130 148 146 134 117 97 76 58 42 27 15 6 -1 -3 2 32 60 59 44 21 -8 -50 -64 -78 -92 -106 -120 -134 -148 -162 -177 -168 -152 -136 -121 -105 -90 -74 -58 -42 -24 4 -19 -42 -100 -113 -126 -139 -152 -165 -177 171 159 147 135 121 106 91 77 61 46 -3 15 -0 -16 -36 -59 -80 -81 -143 174 148 126 105 82 60 38 17 -4 -32 -66 -110 -158 165 134 116 98 80 66 65 100 107 0.066 0.070 0.075 0.079 0.082 0.086 0.091 0.095 0.100 0.104 0.109 0.113 0.114 0.115 0.115 0.116 0.116 0.119 0.125 0.136 0.150 0.155 0.151
tga8300 -scc 5 dc characteristics thermal information rf characteristics parameter test conditions min max unit i dss total zeroegateevoltage drain current v ds = 0.5 v to 3.5 v, v gs = 0 130 300 ma at saturation parameter test conditions typ unit g p smallesignal power gain f = 2 to 18 ghz 7.5 db swr(in) input standing wave ratio f = 2 to 18 ghz 1.5:1 - swr(out) output standing wave ratio f t = 2 o 18 g hz 1.4:1 - p 1db output power at 1edb gain compression f = 2 to 18 g h z 20 dbm nf noise figure f = 2 to 18 ghz 5.5 db f = 8 ghz 32 ip 3 output thirdeorder intercept point f = 12 g hz 28 dbm f = 18 g h z 27 t a = 25?c v ds for i dss is the drain voltage between 0.5 v and 3.5 v at which drain current is highest at dc autoprobe. v + = 6 v, i + = 50% i dss , t a = 25?c parameter test conditions no m unit r jc thermal resistance, channeletoebackside v + = 6 v, i + = 50% i dss 45 ?c/w equivalent schematic rf output rf input 189 m fet 4 189 m fet 3 fet 2 fet 1 v - v + 189 m 189 m recommended test configura tion dc block dut rf input rf output triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com
tga8300 -scc 6 typical bias network r d-q c bypass 2 1 3 4 rf output rf input tga8300 v + = 6 v c bypass v - = - 1 v c block recommended assembly diagram rf output rf input v + v - 25 0.01 f 0.01 f rf connections: bond using three 1- mil diameter, 20 to 30- mil-length gold bond wires at rf input and two 1 - mil diameter, 20 to 30 - mil- length gold bond wires at rf output for optimum rf per formance. close placement of external components is essential to stability . triquint semiconductor, inc. ? texas facilities ? (972) 995-8465 ? www.triquint.com
7 TGA8300-SCC mechanical drawing 0,3073 (0.0121) 1,1227 (0.0442) 1,4199 (0.0559) 0,1803 (0.0071) 1,6256 (0.0640) 0 0 0,1524 (0.0060) 2,2047 (0.0868) 2,3622 (0.0930) 2,2073 (0.0869) 0,1702 (0.0067) 1 2 3 4 units: millimeters (inches) thickness: 0,1524 (0.0060) (reference only) chip edge to bond pad dimensions are shown to center of bond pad. chip size tolerance: 0,0508 (0.0020) bond pad #1 (rf input): 0,1270 x 0,1016 (0.0050 x 0.0040) bond pad #2 (v + ): 0,1575 x 0,1245 (0.0062 x 0.0049) bond pad #3 (rf output): 0,1321 x 0,1016 (0.0052 x 0.0040) bond pad #4 (v C ): 0,0635 (0.0025) (radius) triquint semiconductor, inc. ? texas facilities ? (972) 995-8465 ? www.triquint.com
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